权威例句
Diffusion of E centers in germanium predicted using GGA+U approach
Strain-induced changes to the electronic structure of germanium.
Diffusion of tin in germanium: A GGA+U approach
Point defect engineering strategies to retard phosphorous diffusion in germanium
Vacancies and defect levels in III–V semiconductors
Co-doping with antimony to control phosphorous diffusion in germanium
Tetragonal Bismuth Bilayer: A Stable and Robust Quantum Spin Hall Insulator
Optimizing Proppant Conductivity and Number of Hydraulic Fractures in Tight Gas Sand Wells
Antisites in III-V semiconductors: Density functional theory calculations
Formation and Migration of Oxygen Vacancies in SrCoO3 and their effect on Oxygen Evolution Reactions