权威例句
Diffusion of E centers in germanium predicted using GGA+U approachStrain-induced changes to the electronic structure of germanium.Diffusion of tin in germanium: A GGA+U approachPoint defect engineering strategies to retard phosphorous diffusion in germaniumVacancies and defect levels in III–V semiconductorsCo-doping with antimony to control phosphorous diffusion in germaniumTetragonal Bismuth Bilayer: A Stable and Robust Quantum Spin Hall InsulatorOptimizing Proppant Conductivity and Number of Hydraulic Fractures in Tight Gas Sand WellsAntisites in III-V semiconductors: Density functional theory calculationsFormation and Migration of Oxygen Vacancies in SrCoO3 and their effect on Oxygen Evolution Reactions